| 摘要 |
PURPOSE:To prevent the bias of the composition of a vapor-phase grown film by introducing raw material gases having the different rates of activation to plasma into regions having different field frequency and changing the gases into plasma. CONSTITUTION:N2 Gas having the low rate of activation to plasma is introduced into the firs plasma generating region 12 from an introducing port 11. The rate of activation to plasma of N2 gas is improved by introducing a microwave electric field (2.45MHz) having comparatively high frequency into the plasma generating region 12 from a waveguide 13, and the life of a plasma gas is lengthened. On the other hand, SiH4 is introduced into the second plasma generating region 23 in a reaction section 2 from an introducing port 21, a high-frequency electric field (13.56MHz) is applied between electrodes 22, 24, and SiH4 is changed into plasma. SiH4 changed into plasma is reacted with N2 plasma introduced from a conduit 16, and the SiN film is formed onto a substrate 25. |
