发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To prevent the occurrence of malfunction by applying a same voltage as a voltage which biasing an MOSFET forward, to a gate side when said voltage is generated at the output side of an output circuit constituted by connecting two MOSFETs in series. CONSTITUTION:In nornal operation, an MOSFET8 is in an off state because its gate is grounded, exerting no influence upon the circuit operation. If, however, a negative voltage turning on an MOSFET 3 or 4 is applied to an output terminal 6, the MOSFET8 turns on to hold the gate 1 at the same potential with the output terminal 6. Therefore, the output MOSFET 3 never turns on. The small MOSFET8 is permitted. A hall current generated by the MOSFET8 is absorbed owing to the influence of a negative potential applied to a substrate. As a result, malfunction due to the application of a small number of carriers never occurs.
申请公布号 JPS57166732(A) 申请公布日期 1982.10.14
申请号 JP19810051415 申请日期 1981.04.06
申请人 NIPPON DENKI KK 发明人 INOUE TAIICHI
分类号 H01L21/8234;H01L27/06;H01L27/088;H01L29/78;H03K17/16;H03K17/687;H03K19/003 主分类号 H01L21/8234
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