| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image pickup element and a manufacturing method of the same, which can achieve a high-quality CIGS film to improve sensitivity by performing deposition of the CIGS film at necessary and sufficient temperature regardless of allowable temperature even when temperature required for deposition of the CIGS film is equal to or higher than the allowable temperature of a wiring material and the like of the solid state image pickup element.SOLUTION: A manufacturing method of a solid state image pickup element 1 comprises the steps of: depositing a CIGS film 13 on a dummy substrate (61); laminating N-type semiconductor layers 14, 15, a transparent electrode 16 and a Ti layer 17 to make a laminate 10 on the CIGS film 13 and laminating a transparent electrode 23 and a Ti layer 24 on a glass plate 21 to make a laminate 20; subsequently, bonding the laminate 10 and the laminate 20 by bonding the Ti layers 17, 24 to compose a bonded body; subsequently, removing the dummy substrate (61) and depositing a Ti layer 18 on the removed surface and separately providing an electrode layer 32 and a Ti layer 33 on a semiconductor substrate 31 with a signal reading circuit being attached to make a laminate 30; and subsequently, bonding the bonded body and the laminate 30 by bonding of the Ti layers 18, 33 to obtain the solid state image pickup element 1.SELECTED DRAWING: Figure 1 |
