| 摘要 |
PURPOSE:To capacitate for the amplification at the light level, the light level, the light relay and the conversion into the digital electric signals at the same time by a method wherein the received light amplifying unit and the light emitting unit with excellent noise resistance are provided on the same semiconductor substrate. CONSTITUTION:An N type Al0.35Ga0.65As layer 22, a P type Al0.05Ga0.95As layer 23 and an Al0.35Ga0.65As layer 24 are laminated on an N type GaAs substrate 21 with the carrier density of approximate 5X10<17>-3X10<18> for the liquidus epitaxial growth. Thus said layer 23 to be the active layer emitting or detecting light is held by said layers 22 and 24 with the high band gap to form the double hetero constitution. Next the groove 26 is perforated into the central position of said lamination and one side separated by said groove 26 is used as the light emitting unit 27 whereon the P type diffused layer 25 reaching said layer 23 is provided while the other side is used as the light receiving unit 28. Then the overall surface is covered with the transparent protective film 29 and the holes are perforated while the light emitting surface 33 is surrounded by the P type metallic electrode 32 and the light receiving surface 31 is also surrounded by the N type metallic electrode 30. |
