| 摘要 |
PURPOSE:To make the thickness of the insulating film under a gate electrode even facilitating the operation as well as the design by a method wherein, when the multilayer electrode of an MIS type semiconductor device is formed, the positive type resist film is selected for the resist film providing the insulating film with an opening. CONSTITUTION:A semiconductor substrate 11 is coated with the positive first photoresist film 12 which is soluble if exposed through the intermediary of the insulating film 101 and the metallic film 13 such as Al and the like is evaporated on said film 12 and said film 13 is further coated with the second photo resist film 14 either positive type or the photo-polymerization type as the case may be. Next perform etching operation making use of said film 14 as the specified pattern and mask and expose said film 12 the surface of which is exposed as well as the remaining film 14. Then the exposed region 12a of said film 12 and said film 14 are removed by means of a developer and the Al second metallic film 15 is provided on the exposed substrate 11 and the remaining film 13 while said film 15 is coated with the insulating film 16 by means of the oblique evaporation. Through these procedures repeated, the required gate 21-23 may be formed. |
