Semiconductor device including a transistor and a capacitor and method for manufacturing it.

摘要

The invention provides a semiconductor device including a transistor and a capacitor. An oxide film (22) and a silicon nitride film (24) are formed on a semiconductor substrate (20) Layers (29) and (28) of polycrystalline silicon or a metal silicide containing an impurity are respectively formed between an emitter electrode (31) and an emitter region (30) of the transistor and between an electrode (33) and a thin oxide film (22a) of the capacitor.