发明名称 |
TRASDUTTORE DI PRESSIONE CAPACITIVO AL SILICIO LEGATO ELETTROSTATICAMENTE. |
摘要 |
A plurality of silicon pressure transducers 10 are formed by processing two conductive silicon wafers 11, 14, one of the wafers including a layer of borosilicate glass 32, a thin portion of which 17 is on the surface 12 of one of the plates of a capacitor formed by field-assisted bonding together of the two wafers, the thin layer of borosilicate glass avoiding arcing during the field-assisted bonding process. |
申请公布号 |
IT8223727(D0) |
申请公布日期 |
1982.10.13 |
申请号 |
IT19820023727 |
申请日期 |
1982.10.13 |
申请人 |
UNITED TECHNOLOGIES CORP. |
发明人 |
DANIEL HARRISON GRANTHAM;JAMES LOYCE SWINDAL |
分类号 |
G01L9/12;G01L9/00;H01L29/84;H04R19/00;(IPC1-7):H01L/ |
主分类号 |
G01L9/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|