| 摘要 |
PURPOSE:When amorphous silicon for semiconductor elements is produced by the glow discharge method, the discharge power is specified in the zone contacting with the aluminum electrode to bring the aluminum into ohmic contact with the amorphous silicon. CONSTITUTION:In the reaction chamber, SiH4 containing PH3 is decomposed with glow discharge to form amorphous Si(a-Si) on the base plate. When a semiconductor is formed using the a-Si, an ohmic contact point is set on a part and used as an electrode. These electrodes 13, 13' are made of aluminum and a-Si of the a-Si in the zone contacting with the electrodes is formed under a discharge power of over 0.3W/cm<2>, thus ohmic contact is formed. In order to develop this effect more efficiently, the a-Si film in the active zone is formed under low discharge power conditions and that in the zone contacting with the electrodes is formed under the above conditions until to a certain thickness. |
