| 摘要 |
PURPOSE:To improve the recovery percentage of Si, and to ameliorate economical efficiency by forming amorphous or polycrystal Si onto a Si substrate in an atmosphere in which both Si and a Si compound are changed into plasma. CONSTITUTION:The substrate 3 made of quartz, etc. is heated at approximately 250 deg.C, poly Si or single crystal Si or amorphous Si is used as a target 1, 3X10<-7>Torr is formed by means of a pump 8, the mixed gas of 15% H2 and 85% Ar is employed as a carrier, PH3, etc. are used, approximately 50-400W high-frequency power is applied and sputtering is conducted. The amorphous or polycrystal Si thin-film is grown on the substrate 3 in 2-3Angstrom /sec at that time. According to this constitution, Si gas changed into the thin-film is not discharged wastefully to the outside of a vessel, and economical efficiency is improved remarkably. |
