| 摘要 |
A memory which is selectively operable either as a read-write volatile memory or as a non-volatile memory includes an array of memory cells with each cell comprising a volatile secion and a non-volatile section. The volatile section includes a volatile storage element which can be easily, quickly and repeatedly switched to either binary state. The non-volatile storage section includes a programmable non-volatile electrically alterable storage element and a switching transistor whose conductivity is controlled by the difference between the potential on a word line associated with the cell and one of the operating voltages applied to the volatile section of the cell. The switching transistor when "on" electrically connects the non-volatile section in circuit with the volatile section and when "off" electrically decouples the two sections. When the switching transistor is ON, information can be transferred between the volatile section and the non-volatile section.
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