| 发明名称 |
CHAMBERS FOR PARTICLE REDUCTION IN SUBSTRATE PROCESSING SYSTEMS |
| 摘要 |
A substrate processing system includes a chamber configured to process a semiconductor substrate. At least one surface of the chamber includes a high surface area finish. A purge/vent system is configured to selectively supply purge gas over the high surface area finish of the at least one surface to trap particles in the high surface area finish without opening the chamber. The high surface area finish on the at least one surface of the chamber has a porosity within a predetermined range from 30-60%. The porosity is defined by a normalized density of the high surface area finish relative to an underlying native bulk material of the at least one surface of the chamber. |
| 申请公布号 |
US2016233114(A1) |
申请公布日期 |
2016.08.11 |
| 申请号 |
US201514614736 |
申请日期 |
2015.02.05 |
| 申请人 |
LAM RESEARCH CORPORATION |
发明人 |
Taylor Travis R. |
| 分类号 |
H01L21/67;C23C14/50;C23C14/24;C23C16/44;C23C16/458 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing system, comprising:
a chamber configured to process a semiconductor substrate; at least one surface of the chamber including a high surface area finish; and a purge/vent system configured to selectively supply purge gas over the high surface area finish of the at least one surface to trap particles in the high surface area finish without opening the chamber, wherein the high surface area finish on the at least one surface of the chamber has a porosity within a predetermined range from 30-60%, and wherein the porosity is defined by a normalized density of the high surface area finish relative to an underlying native bulk material of the at least one surface of the chamber. |
| 地址 |
Fremont CA US |
