发明名称 Method of etching polyimide
摘要 In etching openings in polyimide film, the film is first etched with a basic reagent in its uncured or partially cured state to form the desired openings, and thereafter, the film is cured. However, this will leave a layer of disturbed material surrounding the openings which has absorbed some reagent and will not fully cure and, therefore, not provide topography suitable for reliable interconnection and metal adherence. This disturbed material is removed by a second etch in a basic reagent, following additional curing to a sufficient extent to prevent any etching of the polyimide free of absorbed etchant. Thereby, suitable topography and adherence is provided.
申请公布号 US4353778(A) 申请公布日期 1982.10.12
申请号 US19810299370 申请日期 1981.09.04
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FINEMAN, JONATHAN P.;KIENY, JR., LEONARD A.
分类号 G03F7/40;B26F3/00;C08G73/10;C08G85/00;C08J7/12;G03F7/30;H01L21/302;H01L21/311;H01L21/312;H05K1/03;H05K3/00;(IPC1-7):B29C17/08;C03C15/00;C03C25/06 主分类号 G03F7/40
代理机构 代理人
主权项
地址