| 摘要 |
PURPOSE:To improve dielectric strength and operation speed by a method wherein insulators are provided around a linear element and an inverter gate of I<2>L when a linear integrated circuit and an I<2>L integrated circuit coexist on one semiconductor chip. CONSTITUTION:Insulators 421 and 422 are formed surrounding a base region 28 of a linear element (NPN transistor) 26 and a region for an I<2>L inverter gate 27. Moreover, an insulator 423 is formed surrounding an N<+> diffusion layer 30 which is provided for reducing series resistance of the emitter of the I<2>L inverter gate 27. Each insulator can be formed by oxidation process after grooves are formed in the semiconductor layer. With this constitution, because of the existance of the oxide films 422 and 423, useless current is reduced and parasitic capacity is suppressed and, by the oxide film 421, dielectric strength of the linear element is improved. |
