| 摘要 |
PURPOSE:To extend the dynamic range of an output signal without enlarging the form of the device, by providing an amplifying circuit, which has the amplification degree reduced in accordance with increment of an optical input signal, on the formation face of each photoelectric transducer of the solid image pick- up element. CONSTITUTION:A source 3 formed in a P well region 2 is divided into insular parts 3a and 3b through a separating band 14, and a resistance layer consisting of a metal oxide is formed across both parts. Insulator parts 3a and 3b, the region 2, an n type silicon substrate 1 constitute bipolar transistors (TRs) 16 and 17. An MOS TR10 which is a photoelectric conversion part is formed with the source, a drain 4, and a gate 7 of the insular part 3a. When a light L is incident to a photoconducive film 12, charge is stored in a P-N junction capacity 18 formed with the region 2 and the insular part 3a, and the potential at a point A is raised; and when this potential exceeds a voltage V2 applied to the region 2, the TR17 is punched through, and the potential at a point B rises and is fixed, and the dynamic range of the output signal of a TR10 for the input light is extended. |
