| 摘要 |
PURPOSE:To reduce the mask matching processes, by evaporating a gold layer over the whole surface of a semiconductor layer to form an ohmic electrode selectively by the irradiation of energy rays from the back surface, after forming a selective crystal defect layer on a partial region of the surface thereof. CONSTITUTION:Si is implented on the surface of a Cr doped semi-insulating GaAs substrate 1 to form an N type layer 2 on the surface by providing an SiO2 film 3 on the both surfaces for heat treatment. Next, Sn ion is implanted in a source and drain forming parts for amorphism with an AuGe layer evaporated on the surface. After forming source and drain electrodes 7, 7' and a Schottky gate electrode 6 by lift-off, the source and drain electrodes 7, 7' are ohmicized by the irradiation of laser light transparent for the substrate from the back surface. Thus, the number of the mask matching processes can be reduced allowing the microminiaturization of elements. |
