| 摘要 |
PURPOSE:To prevent the mixture of contamination source to a growing region by increasing the diameter of a reaction tube at the downstream side of gas flow from the position of a substrate crystal larger than the diameter of a reaction tube at the upstream side including the region placed with the crystal. CONSTITUTION:The diameter of a reaction tube at the downstream side from the position of a substrate crystal is increased larger than that of a reaction tube at the upstream side including a region placed with a substrate crystal 25 with respect to the gas flow direction of a reaction tube 22 for vapor phase growth. For example, the inner diameter of the reaction tube is formed 45phi from the downstream side 10cm of the position of the crystal 25 with respect to the gas flowing direction of the reaction tube 22 for GaAs vapor phase growth of inner diameter 40phi, and an auxiliary liner tube 26 having 40phi of inner diameter and 2mm. of thickness is inserted into this part. Before the growth starts, when the tube 23 is inserted into the tube 22, the tube 26 is replaced with new one, and the tube 23 is then inserted into the tube 22. |
