| 摘要 |
PURPOSE:To reduce the production of defects and to improve the yield, by covering the electrode side surface of input and output electrodes formed in comb shape on the surface of a piezoelectric substrate and the surface of exposed substrate between the electrodes with SiO2 particles. CONSTITUTION:On a substrate 11 made of LiTaO3, vapor deposited film is formed by using solid solution of Al and Si to form input and output electrodes in comb shape through etching. On a substrate exposed surface 11A between side surfaces 12A and 12B of each electrode 12 and the electrode 12, Si is left as SiO2 particles by etching liquid at etching of the vapor deposited film and covered on the whole surface. Thus, the SiO2 particles cover the surface and the Si is included in the vapor deposited film, allowing to form the film with good adaptability with the substrate 11 at low temperatures and to obtain the excellent electrode 12. |
