| 摘要 |
PURPOSE:To prevent surely short-circuit between an emitter and a base when the emitter region of a bipolar semiconductor device is to be formed by a method wherein after impurity ions are implanted from windows for emitter electrode through a thin insulating film, the thin film is removed by etching having the orientating property. CONSTITUTION:An n<+> type buried layer 8 is formed by diffusion in a p type Si substrate 7, an n type layer 1 to be made as the collector region is made to grow epitaxially on the whole surface containing the buried layer thereof, and the layer 1 is made to form an island type containing the layer 8 by the isolation region. Then a p<+> type base region 2 is formed by diffusion in the layer 1 formed in the island type, and an SiO2 film 6 is adhered on the whole surface containing the base region. After then, respective windows 10-12 for electrodes of emitter, collector contact, and base are formed in the film 6, and heat treatment is performed to make thin SiO2 films 5 to be generated in the windows thereof. Then the upper part of the window 12 is covered with a resist film 13, ions are implanted in the windows 10, 11 through the film 5 to provide the n<+> type emitter region 3 and the collector contact region 4 respectively in the region 2 and in the layer 1, and the film 5 made to be unnecessitated is removed in the etching device provided with the orientating property. |
