Method of manufacturing a semiconductor device having improved alignment marks and alignment marks for said method.

摘要

The manufacture of a semiconductor device wherein a plurality of patterns are successively superimposed and printed on a semiconductor substrate, comprises the steps of:… (a) printing and forming on the semiconductor substrate (60) a first pattern (35 min ) which includes a first alignment mark (31 min ),… (b) in forming a second pattern (36 min ) on the substrate, positioning and printing a second alignment mark (32 min ) contained in the second pattern relative to the first alignment mark on the substrate in such a manner that at least one part of the contour of the first mark is opposed to that of the second mark with a minute distance spaced from each other, and… (c) in forming a third pattern (37 min ) on the substrate, positioning and printing a third alignment mark (33 min ) contained in the third pattern in such a manner that one part of the contour of the third alignment mark is opposed to one part of the contour of the first alignment mark, and at least one part of another portion of the contour of the third alignment mark is similarly opposed to one part of the contour of the second alignment mark.