| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing residual surface oxygen from a crystal substrate by a simple process prior to an epitaxial deposition process.SOLUTION: There is provided an epitaxial deposition process which includes a dry etching process, followed by an epitaxial deposition process. The dry etching process includes a step of placing a substrate 70 to be cleaned into a process chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is excited to form plasma of reactive gas in the plasma cavity. The reactive gas enters into the process chamber and reacts with the substrate to form a thin film. The substrate is heated to vaporize the thin film, and a substrate surface 74 for epitaxial deposition is exposed. Thus, the substrate surface 74 is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer 76 on the substrate surface 74.SELECTED DRAWING: Figure 2C |
