| 摘要 |
PURPOSE:To deflect the luminous light by a method wherein the embedded layer with the different refractive index and the conductive form is embedded in the clad layer located on the active layer leaving the striped part in the luminous device of the duplex hetero structure holding the laser oscillating active layer by the clad layer with the forbidden band wider than that of the active layer. CONSTITUTION:The N type InP clad layer 2 and the InGaAsP active layer 3 for the epitaxial growth and the P type InP clad layer 4 including the N type InGaAsP layer 5 embedded in said layer 4 leaving the striped part is formed on the layer 3. Then the layer 4 is coated with the P side electrodes 61 and 63 corresponding to the layer 5 and coated with the P side electrode 62 corresponding to the striped part while the reverse side of the substrate 1 is provided with the N side electrode 7. Through these procedures, the traverse oscillating mode in the region outside the luminous light in the desired direction by means of changing the horizontal refractive index of the striped part in terms of the refractive index of the embedded layer 5. |
