发明名称 PROCESS FOR POSITIVE TYPE FINE PATTERN FORMATION
摘要 PURPOSE:To obtain a fine positive type pattern by a method wherein a coating of positive type high polymer radiation sensitive substance with some tetraalkyl ammonium perchlorate added thereto is formed, subjected to heat treatment and radiation, and then to development. CONSTITUTION:A substrate is uniformly coated with polymethyl methacrylate containing 1-25wt% of tetra-n-butyl ammonium perchlorate, treated at temperatures 160-200 deg.C, and then is subjected to en electron beam of a 10<-6>-10<-7> coulomb/cm<2> quantity illuminated in a desired pattern. Development follows in a methylcellosolve or a mixture of a methylcellosolve and some isopropyl alcohol. By this procedure, a highly sensitive positive type substance standing a fine work is obtained after a short time of exposure. This technique is applicable to other various positive type high polymer made radiation sensitive materials as well as polymethy metacrylate and X-ray, gamma ray, or an ion beam can also be used for illumination.
申请公布号 JPS57162430(A) 申请公布日期 1982.10.06
申请号 JP19810048854 申请日期 1981.03.31
申请人 SANYO DENKI KK 发明人 KATOU HITOSHI;YAMAZAKI SHIYUUGO;TSUJINO YOSHIKAZU
分类号 G03F7/26;G03F7/039;G03F7/32;H01L21/027;(IPC1-7):01L21/30 主分类号 G03F7/26
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