发明名称 GATE CONTROL CIRCUIT FOR GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To prevent the erroneous firing of a gate turn-OFF thyristor (GTO) by closing a switch of a reverse bias circuit having a DC power source and a series circuit of switches during the OFF period of the GTO. CONSTITUTION:Circuits 8, 9, 11 for supplying OFF gate currents to turn a gate turn-OFF thyristor (GTO) and reverse bias circuits 2, 3 for preventing the erroneous operation by reversely biasing the gate at the OFF time of the GTO are provided. When the switch 3 is closed during the OFF period of the GTO, the voltage of a DC power source 2 is applied directly to the GTO. The tail current of the GTO at the turning-OFF time of the GTO and the displacing current at the abruptly changing time of an anode volage flow through the power source 2, but since the impedance of passage is small, the variation in the gate voltage of the GTO is small. Accordingly, the GTO is not erroneously fired due to the application of the positive voltage.
申请公布号 JPS57162962(A) 申请公布日期 1982.10.06
申请号 JP19810046508 申请日期 1981.03.31
申请人 HITACHI SEISAKUSHO KK 发明人 SATOU MASAYOSHI;FUKUI HIROSHI;HIROSE MASAYUKI
分类号 H02M1/06;H02M1/08;H03K17/732 主分类号 H02M1/06
代理机构 代理人
主权项
地址