| 摘要 |
PURPOSE:To enable the completion of a preferable annealing with doping efficiency being higher than 45% by maintaining the preliminarily heating temperature, reflectivity, pulse width and emitting energy in a special relationship, thereby emitting flash from a flash discharge lamp. CONSTITUTION:When a silicon semiconductor 6 preliminarily heated in advance to a temperature TA deg.C is annealed by flash emission from a flash discharge lamp 3, under the conditions of maintaining the relationship that (t) falls in the range of 70<=t<=780, where R represents the reflectivity of the silicon semiconductor, (t) microsecond represents the pulse width (1/2 wave amplitude) of the flash light, and E joule/cm<2> represents the emitting intension on the silicon semiconductor and 2.3X10<-3>t<0.27=(1-R)E/(1,410-TA)<=3.8X10<-3>t<0.28> is maintained. For example, a plurality of flash discharge lamps 3 are intimately contacted in zigzag shape in a light source, a plane mirror 4 is disposed on the light source, a specimen base 5 is disposed capable of preliminarily heating with a heater under the mirror in an annealing furnace, and the semiconductor is annealed under the above conditions. |
