Method for manufacturing semiconductor device.

摘要

Disclosed is a method for manufacturing a semiconductor device of high reliability, high performance and high integration with high yield. The method of this invention has the steps of forming at least one groove (24) in a semiconductor substrate (21 forming a non-single-crystalline semiconductor film (28) to cover an entire surface of the semiconductor substrate (21) including an inner surface of the groove (24), selectively etching the non-single-crystalline semiconductor film (28) so as to leave the non-single-crystalline semiconductor film (28) on at least a side wall of the groove (24), and forming an oxide isolation layer (32) in the groove (24) by thermal oxidation.