发明名称 FORMING METHOD FOR WIRING
摘要 PURPOSE:To improve the reliability by forming a thin film having good drape with a wire layer by a low temperature heat treatment on a metallic wire layer formed on an oxidized film on a substrate, patterning it, treating it at high temperature and selectively removing the wire layer with the thin film as a mask. CONSTITUTION:A thin film 8 of Al2O3 is formed on an aluminum wire layer 3 formed on an oxidized film 2 on a substrate 1. The film 3 is selectively removed with a resist pattern 9 as a mask, the pattern 9 is removed, it is treated at high temperature, and the film 3 is selectively etched with the film 8 as a mask. Thus, the productions of the projection from the metallic wire layer and the residue of the resist can be prevented, thereby enhancing the reliability.
申请公布号 JPS57162350(A) 申请公布日期 1982.10.06
申请号 JP19810047075 申请日期 1981.03.30
申请人 FUJITSU KK 发明人 TABUCHI SHIYUUJI;ABIRU AKIRA
分类号 H01L23/52;H01L21/306;H01L21/3205 主分类号 H01L23/52
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