发明名称 COATING METHOD OF RESIST ON WAFER
摘要 PURPOSE:To improve the manufacturing yield of a semiconductor device by coating a resist on a wafer of approximately circular shape and then removing the resist of the outer periphery while rotating the wafer, thereby preventing the notch of the resist at the outer periphery. CONSTITUTION:A resist 2 is coated while rotating a wafer 1 of approximately circular shape, and the resist 2'' is then removed at the outer periphery while rotating the wafer 1. For example, a positive resist 2 is rotatably coated on the wafer 1 placed on a rotary base 3, an energy beam such as ultraviolet ray is emitted through an optical fiber 5 to the resist 2'' of the outer periphery while rotating the wafer, thereby allowing the resist 2'' of the outer periphery to be sensed with the light. Thereafter, when the resist 2 of the center is exposed in the prescribed pattern and is developed, the resist 2'' of the periphery is simultaneously removed.
申请公布号 JPS57162336(A) 申请公布日期 1982.10.06
申请号 JP19810047058 申请日期 1981.03.30
申请人 FUJITSU KK 发明人 KANAZAWA MASAO
分类号 H01L21/027;G03F7/16;(IPC1-7):01L21/30 主分类号 H01L21/027
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