| 摘要 |
PURPOSE:To contrive to attain high integration of a semiconductor device by a method wherein openings are formed in a protective film on a unidirectionally conducting type Si substrate, anisotropic etching is performed thereon, and reverse conducting epitaxial layers are laminated to form element forming regions. CONSTITUTION:The openings are formed in the SiO2 film 4 on the p type Si substrate 1 having the face index (100), anisotropic etching is performed to provide trapezoid grooves having (111) faces on the sides, the n type epitaxial layers 5 are made to grow vapor phase epitaxially using SiH2Cl2+PH3 gas, and polycrystalline Si 6 is adhered on the film 4. After polycrystalline Si 6 thereof is oxidized by high temperature treatment, SiO2 6 on the film 4 only is etched using HF. By this constitution, length L of the isolation region and depth D of the element forming region can be made to have no relation, and length L can be minimized and integration can be enhanced. |
