| 摘要 |
PURPOSE:To prevent inversion of a semiconductor device by a method wherein in a V groove for isolation provided in an epitaxial layer, a polycrystalline Si layer containing P in high density is made to grow by the depressurized vapor growth method at first, and polycrystalline Si of the necessary quantities are filled up thereon in succession. CONSTITUTION:An SiO2 film 6 is formed on a substrate formed by laminating an n type epitaxial layer 2 on a p type Si layer 1 having face orientation (100), an Si3N4 mask 7 is applied thereon, and anisotropic etching is performed to form the V groove 10 to reach the p type layer 1 in the middle of n<+> type buried layers 9. An SiO2 film 11 is provided on the inside face of the groove, the polycrystalline Si layer 12 containing no additive is laminated having favorable close adhesion by the depressurized CVD method, and after P is made to diffuse in high density by the ion implantation method, etc., in succession, the groove is buried with the Si layer 13 at a high growth speed by the CVD method in normal atmospheric pressure. P may be contained in the layer 13 or may not. Then after the upper face thereof is polished mechanically, it is covered with an SiO2 film 14 to be completed. By this constitution, gettering of Na<+> ions is performed by P in the layer 12, the SiO2-Si interface between the V groove and the substrate is stabilized, and leak to be generated by n type inversion is prevented. |
