发明名称 |
USE OF AN OXYGEN-CONTAINING PLASMA TO DEVELOP A PHENOL-FORMALDEHYDE/DIAZOKETONE RESIST REACTED WITH MAGNESIUM IONS |
摘要 |
<p>Plasma Development of Resists Exposed patterns in phenol-formaldehyde Novolak resin/diazo ketone resist layers are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure. FI9-79-063</p> |
申请公布号 |
CA1132832(A) |
申请公布日期 |
1982.10.05 |
申请号 |
CA19810371001 |
申请日期 |
1981.02.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
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分类号 |
G03C5/18;G03F7/022;G03F7/26;G03F7/36 |
主分类号 |
G03C5/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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