发明名称 |
Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching |
摘要 |
A plasma etcher wherein the provision of a gas outlet directly in an etching chamber is avoided and wherein a subchamber having a sufficient capacity is connected to the etching chamber through a joint part, the gas outlet being provided in this subchamber. With the apparatus, the distribution of etching rates in plasma etching becomes uniform.
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申请公布号 |
US4352974(A) |
申请公布日期 |
1982.10.05 |
申请号 |
US19800173364 |
申请日期 |
1980.07.29 |
申请人 |
HITACHI, LTD. |
发明人 |
MIZUTANI, TATSUMI;KANAI, NORIO;HARADA, KUNIO;KOMATSU, HIDEO;IIDA, SHINYA |
分类号 |
B23K10/00;C30B33/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/3215;(IPC1-7):B23K9/00;C23F1/02 |
主分类号 |
B23K10/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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