发明名称 Plasma etcher having isotropic subchamber with gas outlet for producing uniform etching
摘要 A plasma etcher wherein the provision of a gas outlet directly in an etching chamber is avoided and wherein a subchamber having a sufficient capacity is connected to the etching chamber through a joint part, the gas outlet being provided in this subchamber. With the apparatus, the distribution of etching rates in plasma etching becomes uniform.
申请公布号 US4352974(A) 申请公布日期 1982.10.05
申请号 US19800173364 申请日期 1980.07.29
申请人 HITACHI, LTD. 发明人 MIZUTANI, TATSUMI;KANAI, NORIO;HARADA, KUNIO;KOMATSU, HIDEO;IIDA, SHINYA
分类号 B23K10/00;C30B33/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/3215;(IPC1-7):B23K9/00;C23F1/02 主分类号 B23K10/00
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