| 摘要 |
<p>A semiconductor charge transfer device, e.g. a CCD area imaging array, having a multi-level polysilicon gate structure (20 - 22, 24, 25, 26) the geometry of the bus-line portions (24, 25, 26) of which are such that each bus-line has relatively large area regions where it does not overlap another polysilicon layer. The making of interconnections 24b, 25b, 26b) between the polysilicon bus-lines and an overlying metal conductor pattern 24a, 25a, 26a) without producing inter-level short circuits via pinholes in the polysilicon is thus facilitated.</p> |
