| 摘要 |
PURPOSE:To improve the cross modulation characteristic of dual gate FET, by lengthening the first gate electrode in channel direction more than the second gate electrode in channel direction. CONSTITUTION:Each of electrodes a source 3, drain 4, the first gate 5 and second gate 6 are respectively set on the surface of an n type GaAs operating layer 2 distributed on a semi-insulating GaAs substrate 1. The lengths of each electrode the first gate 5 and second gate 6 in the channel direction are respectively supposed to be lG1 and lG2, then lG1>lG2 holds. Thus, the characteristic region i.e. the coupled part of characteristics of the FET1 and FET2 is improved in the voltage linearity of drain current and the first gate source voltage as the ratio of lG2/lG1 decreases. |
