| 摘要 |
PURPOSE:To form a X-ray absorption pattern having a large sticking force by a method wherein electron beam irradiation is provided for a metal layer stacked on a silicon wafer and the irradiated portion is converted into silicide. CONSTITUTION:A layer 102 of thickness of 0.1-0.5mum, adding to it the boron of more than 5X10<10>cm<-3> is formed on the surface of silicon substrate 101 and a gold or platinum layer 103 of 0.1-0.5mum thickness is stacked on a boron adding layer 102. Then, the electron beam over 1A/cm<2> current density, of 20- 100kV acceleration voltage and 50nA-10muA current value is irradiated against the layer 103 to drawn the pattern and the irradiated portion is heated at over 350 deg.C and for a second or more to form a metal silicide 207. After an insulation film 401 is formed in the back face of the insulation film 401, the insulation film 401 is removed selectively and the remaining insulation film 401 is used for a mask to remove the substrate 101, thereby forming a reinforced support assembly 501. |
