| 摘要 |
PURPOSE:To easily form connecting wires connecting integrated circuits by a method wherein connecting impurity diffusion layers are formed at the first and the second inclined edge faces in each semiconductor integrated circuit and the diffusion layers are connected by connecting wiring metals. CONSTITUTION:Semiconductor integrated circuits 12, 13, 14 are respectively isolated by inserting insulating films 15, 16 between each semiconductor integrated circuit and are stacked. The stacked left and right faces are formed to provide slopes with a predetermined angle by using each kind of chemical or gas plasma. Connecting impurity diffusion layers 12a, 12b, 13a, 13b, 14a, 14b with predetermined depth are formed at the inclined edge faces of the circuits 12, 13, 14 by a thermal diffusion method or an ion implantation method. The diffusion layers 12a and 13a are connected by the first connecting wiring metal layer 17 and the diffusion layers 13b and 14b are connected by the second connecting wiring metal layer 18. And a surface protective film 19 is formed around the multi-layer semiconductor integrated circuits. |
