| 摘要 |
PURPOSE:To permit the high integration of a memory by shortening electron injection region length less than the width of a depletion layer existing between control gate region and a semiconductor substrate at the time of injecting electrons. CONSTITUTION:A source region 8 and a drain region 9 are provided at a semiconductor substrate 1. Furthermore, a stray gate electrode 4 is provided on the substrate 1 through a gate insulating film 10. And the length Li of the region which electrons generated in the substrate 1 enter into a stray gate electrode 4 is made shorter than the width of the depletion layer existing between a control gate region 2 and the semiconductor substrate 1 when electrons are injected into the electrode 4. Therefore, many electrons generated in the substrate are injected into the tip section of an electron injection region. Accordingly, lucky electron injection is possible even if the electron injection region length Li is short. |
