发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the insulation property between respective elements on a substrate by a mothod wherein grooves are formed to the separating regions of the respective elements and organic oxy-silane compound is applied on the surface of the substrate and inorganic glass is applied on the organic oxy-silane compound, then the substrate is treated by heat. CONSTITUTION:Grooves 5a and 5b are formed on a p type silicone substrate 4 and organic oxy-silane compound is applied on the surface of the substrate 4 so as to form an organic resin film 6. After a protective film 7 of inorganic glass is formed on the film 6, thermal treatment is carried out in the atmosphere of reductive or inert gas at the temperature higher than the starting temperature of the decomposition of the film 6. Then the neighborhood of the grooves 5a and 5b is masked by resist and the films 6 and 7 are removed by etching. After that, a gate oxide film 9 is made grow and a polycrystal line silicon gate electrode 10 is applied and a source region 11 and a drain region 12 are formed by ion implantation.
申请公布号 JPS57160132(A) 申请公布日期 1982.10.02
申请号 JP19810044115 申请日期 1981.03.27
申请人 FUJITSU KK 发明人 OGAWA TETSUYA;SHIBAYAMA HIKOSUKE;TOYOKURA NOBUO;HISATSUGU NORISHIGE;NAKASHIMA MINORU;TAKEDA SHIROU;KITAKOUJI TOSHISUKE
分类号 H01L21/76;H01L21/31;H01L21/312;H01L21/762 主分类号 H01L21/76
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