发明名称 GATE-TURNOFF THYRISTOR DEVICE
摘要 PURPOSE:To inhibit overvoltage in the forward direction while miniaturizing a clamping circuit and improving efficiency by forming the clamping circuit clamping the voltage of the capacitor of a snapper circuit within predetermined value so as to be directed to the forward direction to an SCR. CONSTITUTION:Clamping diodes 51, 52 are connected in polarity which discharges charging voltage, which is directed toward the forward direction to the gate-turnoff thyristor GTO of the capacitors 36 from the series nodes of the diodes 35 and capacitors 36 of the snapper circuit, toward a power supply 1. Clamping diode currents are decelerated in a short time by setting the sum of the forward voltage drops of the diodes 51, 52 and snapper diodes 351, 352 to value larger than the forward voltage drop of a free wheel diode 4. Accordingly, the forward direction voltage of the GTO can be inhibited, and the GTO device can be miniaturized and efficiency is improved.
申请公布号 JPS57160362(A) 申请公布日期 1982.10.02
申请号 JP19810043935 申请日期 1981.03.27
申请人 HITACHI SEISAKUSHO KK 发明人 TSUBOI TAKASHI
分类号 H02M1/06;H02M1/08;H03K17/73 主分类号 H02M1/06
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