| 摘要 |
PURPOSE:To obtain the a-Si photo electromotive force element having high sensitivity for the light of wide wave length and a high photoelectric conversion efficiency by a method wherein the substrate temperature is changed when an amorphous silicon film (s-Si) is formed. CONSTITUTION:The photo electromotive force element consists of a transparent substrate 1 made of glass and the like, a transparent electrode 2 of iridium oxide and the like, an a-Si layer 3 consisting of a P type a-Si layer 4, an i-type a-Si layer 5, whereon no impurity is doped, and an N type a-Si layer 6, and an electrode 7 of aluminum and the like, and when the manufacturing method for the photo electromotive element, which receives the rays of the sun 8, is used, the substrate temperature is changed when an i-type a-Si layer 5 is formed in such a manner that a low temperature (210 deg.C) is used when forming the light incidenting side (the side which comes in contact with the P type a-Si layer 4), and a high temperature (285 deg.C) is used when forming the light transmitting side (the side which comes in contact with the N type a-Si layer 4). As a result, a difference is generated in the width of forbidden band of the i-type a-Si layer, and the efficiency of photoelectric conversion can be improved. |
