| 摘要 |
PURPOSE:To ensure formation of the luminous semiconductor chip containing the electrode on the same plane with the minimum frequency of the photo etching. CONSTITUTION:The n-type GaP21 and p-type GaP22 are laminated on n-type GaP20 and ohmic electrode 23 is provided to be isolated by the groove reaching layer 21. Then Au-Si electrode 25 and copper 26 are laminated, and groove 27 which is adjacent to groove 24 and bites a little layer 21. Then grid-like notched groove 28 is formed deeply than groove 24, and formed wafer 30 is dipped into the solder to form vamp 29 and 29'. After this, groove 28 is notched more deeply to produce luminous semiconductor chip 31. In such constitution, the luminous element can be produced with the minimum frequency of the photo etching, thus obtaining a highly reliable device with reduced linear junctions. |
