| 摘要 |
PURPOSE:To enable the formation of a pattern in high reliability by repeating several times photoetching steps for forming a gate electrode, thereby reducing the side etching amount of gate electrode metal and compensating for the displacement of aligning. CONSTITUTION:An insulating film 3 excluding a diffused layer 3 and an electrode forming pattern is formed on a substrate 1, an electrode forming metal 4 is produced on the film 3 and at the part of the pattern for forming the electrode of the layer 3, and a photoresist 5 is coated on the metal 4, thereby forming a pattern. Then, it is etched to 1/2 to the thickness of the metal 4, the photoresist 5 is then removed, the photoresist 5 is again coated on the overall surface of the metal 4, and is etched. In this case, since the side etched part 6 formed by the first etching is covered with the second photoresist 5, the processing accuracey can be improved. |
