| 摘要 |
PURPOSE:To enable reduced pressure vapor phase growth in a quartz reaction tube which can be readily cleaned by enabling to remove only the inside quartz reaction tube having double reaction tube structure. CONSTITUTION:A semiconductor vwafer 1 is stood on a quartz boat 2, and is filled in the inside quartz reaction tube 3. Temperature is adjusted by a heater 4, and the pressure is reduced by an evacuation pump 5. The reduced pressure state is maintained by a quartz furnace core tube 6, a stainless steel front cap 7 and a stainless steel end cap 9. When reaction gas is filled from a gas guide tube 11, a desired thin film is formed on the surface of the wafer 1. Such a film growth is repeated to produce a crack at the thin film thus formed thickly on the inner wall of the tube 3, and an exit 8 of the boat 2 is opened before it falls, and only the tube 3 is pulled out, and is cleaned. |
