| 摘要 |
PURPOSE:To use an A/D converter at a very high frequency region, by using a semiconductor image picup element for the coverter. CONSTITUTION:A semiconductor image pickup element array 6 is fixed to the outside of a CRT2. To intorduce light produced every time an electron beam 4 impinges on a fluorescent layer 11 to the element 6, a photoconductor plate 10 and a photoconductor window 8 are used. The element 6 has two-layered polysilicon clock lines 12A, 12B, 15, 17 and 19 and a front side illumination and is made with the implanting channel NMOS CCD technology. |
