| 摘要 |
PURPOSE:To improve the reliability, yield and performance of a semiconductor device by forming a film containing more than at least one layer on the surface of a semiconductor substrate, ion implanting on the substrate through the film, removing the film and depositing a metallic film. CONSTITUTION:A field oxidized film 202 is formed on a P type Si substrate 201, the silicon surface 203 of the part becoming a wire is exposed, an oxidized film 207 is formed thereon, and As ions are implanted (A) through the oxidized film. Thus, an As diffused layer 204 is formed. At this time contaminating substance 208 made of carbon is mainly adhered onto the surface, but when an oxidized film 207 is etched and removed, the substance 208 is simultaneously removed. The layer 204 is exposed without contamination, and silicide is bonded onto the diffused layer. In this manner, a low resistance diffused layer wiring can be formed. |
