| 摘要 |
PURPOSE:To prevent the contamination of water droplet by performing an impurity diffusion through a polycrystalline silicon layer without removing an oxidized layer on a scribing region when opening a selectively diffusing window and then removing the oxidized layer on the scribing region. CONSTITUTION:The conventional technique is similarly used up to the step of reducing the thickness of an SiO2 layer at the position of opening a window, then in the step 21 a mask is covered not only on an SBD (Schottky barrier diode) region but scribing region, and then the step of opening windows for forming emitter, base contact and collector contact. The scribing region is covered with a thin SiO2 layer, and since the surface of the scribing region is hydrophilic even if the step 23 of removing naturally oxidized film is performed, a region surrounded by water repellent surface is not produced. Accordingly, no water droplet is adhered and remained. The steps 24-26 are performed similarly to the conventional method, but in the step of removing the polysilicon layer is performed by the step of etching and removing the SiO2 layer on the scribing region in addition to the SBD region of the conventional method. |
