| 摘要 |
<p>PURPOSE:To detect the position of the optical image which was projected on the surface of a semiconductor by a method wherein a semiconductor element, having a P-N junction with which photoelectric conversion will be performed, is used and a photo current value of the semiconductor element is measured. CONSTITUTION:The light-receiving element 1, functioning as an x-direction one- dimensional position detector, consists of an N type semiconductor substrate 2 whereon P type regions 3 and 4 are formed on the surface, and a silicon oxide film 5 is formed on the surface of the substrate 2 and the P type regions 3 and 4, excluding a part of the regions 3 and 4. Electrodes 6, 7 and 8 are formed into a rectangular shape with the longer side in y-direction, and the electrodes 6 and 7 are formed in such a manner that they are completely shielding the upper surface of the P type regions 3 and 4 from the light. When a beam of light is irradiated on the light-receiving element 1, photo currents IL1 and IL2 on terminals D and E are measured in proportion to the distances s and t between the light spot 9 and the electrodes 6 and 7. The position x of the incident ray can be determined by calculating the photo current ratios IL1 and IL2.</p> |
