| 摘要 |
PURPOSE:To improve the corrosion resistance of a semiconductor device by covering only an electrode wire layer containing mainly aluminum on the uppermost layer of the device with an alloy of the wire layer and transition metal. CONSTITUTION:An insulating layer 3, an electrode wire 3 containing mainly aluminum, an insulating layer 4 and the uppermost layer aluminum electrode wire 5 are formed on a silicon substrate 1 formed with an element region. Transition metal layer 6 such as titanium, vanadium, etc. is deposited on the overall surface of the wafer, and an intermetallic compound layer 7 is formed by a heat treatment. Thereafter, unreacted titanium, or vanadium layer 6 is removed by etching, and the entirety is sealed with resin. |
