| 摘要 |
PURPOSE:To make high speed operation available by a method wherein the emitter region common to the two horizontal type transistors of the I2L is provided in the common base formed in the two collectors of said transistors. CONSTITUTION:The P type regions 12 and 12' are formed in the N type semiconductor substrate 11 to be the emitter of the vertical transistor of the I<2>L and the N type regions 14 and 14' are further formed in said regions 12 and 12'. Then after the N type region 15 to be the common base region of said horizontal type transistor is formed in the two P type regions 12 and 12', the P type region 16 to be the emitter region is formed. Through these procedures, the high speed operation is made available by means of reducing the depth of each region decreasing the junction capacity. |
