| 摘要 |
PURPOSE:To stably form a thin dielectric film free from defects such as pinholes on each substrate by a plasma vapor phase method by activating a reactive gas for forming the film and a carrier gas by applying induced energy. CONSTITUTION:A plurality of substrates 1 for depositing thin films are arranged on a quartz boat 2 in a reaction furnace 3, and 1 kind of metal selected from Ba, Pb, Sr, Ca, Mg, Zr, Nb, Li, Ta, Ti, Sn, Sb, Bi and W, org. or inorg. metallic salt or metallic oxide of said metal as starting material 4 for thin films is put in a boat 5 and vaporized by heating to <=800 deg.C with an electric furnace 10. A carrier gas 14 such as H2, He or Ne is introduced into the furnace 3. By applying high frequency energy to the furnace 3 through electrodes 6, 7, the whole furnace is set in a plasma discharge state, and the vaporized starting substance is activated in the activating section 26 by heating with a heating furnace 11 to form very thin films of the starting substance free from pinholes on the surfaces of the substrates 1. |
