| 摘要 |
PURPOSE:To form more than one region having different impurity concentration on a substrate in a single doping process by a method wherein masks having different effects against doping are formed on the substrate and the impurity is injected into the whole surface from above the mask. CONSTITUTION:A pad oxide film 33 is formed on the surface of a silicon substrate 31 after the silicon substrate 31 acting as a base has been processed by a thermal oxidation method. Then, a silicon nitride film 35 is formed on this pad oxide film 33 by a CVD method. A channel stopper region 39 and an active region 40 can be formed during an identical impurity-injecting process, and, at the same time, the impurity concentration at each region can be set to the respective desired impurity concentration.
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